Part Number Hot Search : 
MG200 BD3005N MX536AJN 32100 TA1310A 105MP MCM6205D AOI2610
Product Description
Full Text Search
 

To Download CLD370F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
 CLD370F
Plastic PIN Photodiode
0.310 (7.87) 0.290 (7.37)
(R)
Clairex
Technologies, Inc. December, 2001
0.040 (1.02)
See Note 3
ANODE
0.06 (1.5) max.
0.23 (5.9)
0.20 (5.05)
CATHODE
0.100 (2.54) nom.
1.0 (25.4) min.
0.020 (0.50) sq. nom.
ALL DIMENSIONS ARE IN INCHES (MILLIMETERS) All dimensions are in inches (mm).
features
* * * * * * fast switching speed low junction capacitance 850 nm peak response large photosensitive area sharp cutoff to visible wavelengths 30 acceptance angle
absolute maximum ratings (TA = 25C unless otherwise stated) storage temperature............................................................-40C to +125C operating temperature......................................................... -40C to +100C lead soldering temperature(1)...............................................................260C continuous power dissipation(2) .........................................................150mW notes: 1. 0.06" (1.5mm) from the header for 5 seconds maximum 2. Derate linearly 1.6mW/C from 25C free air temperature to TA = +100C. 3. Protruding resin under flange is 0.06" (1.5mm) max.
description
The CLD370F is a high gain silicon photodiode mounted in a T-13/4 (5mm) dark plastic package. The chip has an active area of approximately 0.080" x 0.080" (4 square mm) and is intended for use as an infrared sensor. The dark tinting of the package effectively attenuates wavelengths shorter than 700nm eliminating most visible light interference.
electrical characteristics (TA = 25C unless otherwise noted) symbol parameter min 5.0 30 (1)
typ 10.0 60.0 25 350 60 30
max 30 -
units A A nA V pF mV deg. ns
test conditions VR = 5V, Ee = 0.1mW/cm2 VR = 5V, Ee = 1.0mW/cm2 VR = 10V, Ee = 0 IR = 100A, Ee = 0 VR = 3V, Ee = 0. f = 1MHz Ee = 0.1mW/cm2 RL = 1k, VR = 10V
ISC ID VBR CJ VO HP tr, tf Note:
Short-circuit current(1) Dark current Reverse breakdown Junction capacitance Open circuit voltage Total angle at half sensitivity points Output rise and fall time
1. Radiation source is an aluminum gallium arsenide IRED operating at a peak wavelength of 850nm.
Clairex reserves the right to make changes at any time to improve design and to provide the best possible product.
Revised 3/15/06
Clairex Technologies, Inc. Phone: 972-265-4900
1301 East Plano Parkway Fax: 972-265 4949
Plano, Texas 75074-8524 www.clairex.com


▲Up To Search▲   

 
Price & Availability of CLD370F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X